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AEGIS SEMICONDUTORES LTDA. A5A:1150.XX VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 175 O C A5A:1150.14 A5A:1150.16 A5A:1150.18 A5A:1150.20 A5A:1150.22 1400 1600 1800 2000 2200 Max. VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 175 C 1500 1700 1900 2100 2300 O TJ = -40 to 0 OC 1400 1520 1710 1900 2090 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 960 125 1800 12.2 IFSM Max. Peak non-rep. surge current 12.8 kA 14.5 15.2 627 I2t Max. I2t capability 683 886 966 It 2 1/2 UNITS O O NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial T J = 175 C, rated VRRM applied after surge. Initial T J = 175O C, no voltage applied after surge. Initial T J = 175O C, rated VRRM applied after surge. O Initial T J = 175 C, no voltage applied after surge. O O C C C A O IF(RMS) Nom. RMS current A kA2s t = 8.3 ms t = 10ms Max. I t 2 1/2 capability t = 8.3 ms Initial T J = 175OC, no voltage applied after surge. kA2s1/2 N.m I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). - F Mounting Force 10600 900 AEGIS SEMICONDUTORES LTDA. A5A:1150.XX CHARACTERISTICS PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.90 --------20 --------85(3.0) TO-200AB MAX. UNITS 2.11 0.8 0.809 0.427 0.396 40 0.038 0.045 0.046 0.02 --V V mW mA O O O TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 3016A. O TJ = 175 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 C. Max. Rated VRRM O O C/W DC operation, double side C/W 180 sine wave, double side C/W 120 rectangular wave, duble side O O O C/W Mtg. Surface smooth, flat and greased. Double side. ----- g(oz.) Maximum Allowable Case Temperature Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) 170 160 150 140 130 120 30 Maximum Allowable Case Temperature (C) 170 160 150 140 130 120 30 110 100 60 90 120 180 DC 110 100 0 60 90 120 180 90 0 200 400 600 800 1000 1200 1400 1600 1800 *Rectangular waveform 100 200 300 400 500 600 700 800 900 1000 1100 1200 *Sinusoidal waveform Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A5A:1150.XX Maximum Average Forward Power Loss 20000 Maximum Average Forward Power Loss 30 Maximum Average Forward Power Loss (W) 25000 30 Maximum Average Forward Power Loss (W) 18000 16000 14000 12000 10000 8000 20000 15000 60 60 10000 90 120 90 6000 4000 2000 0 0 200 400 600 800 120 180 DC 5000 180 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 *Sinusoidal waveform 1000 1200 1400 1600 1800 2000 *Rectangular waveform Average Forward Current (A) Average Forward Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Forward Voltage Drop 10000 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (C/W) Instantaneous Forward Current (A) 0.01 1000 125C 25C 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1E-3 1E-3 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics AEGIS SEMICONDUTORES LTDA. A5A:1150.XX TO-200AB Fig. 7 - Outline Characteristics |
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